IRF820 2.5A 500V N-Channel MOSFET

The IRF820 2.5A 500V N-Channel MOSFET is engineered for high-voltage switching and reliable power management in diverse electronic systems. It combines a 500V maximum drain-to-source voltage with a 2.5A continuous drain current rating to address applications that demand elevated voltage tolerance alongside moderate current handling.

• 500V maximum drain-to-source voltage for compatibility with high-voltage circuits and industrial equipment.
• 2.5A continuous drain current to support steady-state operation in power switching roles.
• Low gate charge to enable faster switching and reduced switching losses.
• RDS(on) of 2.5 ohms at 10V gate drive to promote efficient conduction and lower heat generation under specified drive conditions.
• Fast recovery diode built-in to enhance performance in switching power supplies and inductive load control.

Built using advanced semiconductor techniques, the IRF820 emphasizes thermal performance and switching efficiency without compromising durability. Its characteristics make it a suitable choice for power converters, motor drivers, amplification stages, and other circuits where high voltage capability and reliable switching are required. Designers will find the IRF820 useful when selecting a transistor that balances voltage rating with practical current capacity while delivering dependable operation in demanding environments.