TNY268PN

The TNY268PN power transistor is a compact, integrated solution optimized for switched-mode power supplies and power management applications. It combines a high-voltage MOSFET with a control IC to deliver reliable switching performance and simplified system design, particularly where board space is limited. 700 V drain-to-source voltage for robust operation in high-voltage circuits. 0.9 A typical current to support moderate power loads with stable behaviour. Integrated thermal shutdown to protect the device from overheating under heavy use. Low standby power consumption to improve energy efficiency during idle states. Compact DIP-7 package suited for tight PCB layouts and through-hole assembly. By integrating the control circuitry with the MOSFET, the TNY268PN reduces external component count and streamlines assembly, which can lower overall system cost and simplify manufacturing. This integration also contributes to consistent output and predictable behaviour across varying load conditions. Constructed with advanced processing techniques, the device offers enhanced switching characteristics and thermal management. Its built-in protections and compact footprint make the TNY268PN a reliable choice for designers seeking long-term durability and efficient power delivery in modern supply designs.