IRF820 2.5A 500V N-Channel MOSFET

The IRF820 2.5A 500V N-Channel MOSFET is engineered for high-voltage switching and reliable power management in diverse electronic systems. It combines a 500V maximum drain-to-source voltage with a 2.5A continuous drain current rating to address applications that demand elevated voltage tolerance alongside moderate current handling. 500V maximum drain-to-source voltage for compatibility with high-voltage circuits and industrial equipment. 2.5A continuous drain current to support steady-state operation in power switching roles. Low gate charge to enable faster switching and reduced switching losses. RDS(on) of 2.5 ohms at 10V gate drive to promote efficient conduction and lower heat generation under specified drive conditions. Fast recovery diode built-in to enhance performance in switching power supplies and inductive load control. Built using advanced semiconductor techniques, the IRF820 emphasizes thermal performance and switching efficiency without compromising durability. Its characteristics make it a suitable choice for power converters, motor drivers, amplification stages, and other circuits where high voltage capability and reliable switching are required. Designers will find the IRF820 useful when selecting a transistor that balances voltage rating with practical current capacity while delivering dependable operation in demanding environments.