2N1613

The 2N1613 is a robust bipolar junction transistor engineered for medium-power amplification and switching applications. It delivers consistent electrical characteristics and reliable performance for a wide range of general-purpose circuits. Collector‑Emitter Voltage: 30 V Collector Current: 0.5 A Power Dissipation: 625 mW Transition Frequency (ft): 120 MHz Gain‑Bandwidth Product: 60 These specifications provide a balance between voltage tolerance, current capacity and frequency response, making the 2N1613 suitable for low- to medium-power amplifier stages, general switching duties, and signal processing tasks where predictable transistor behavior is required. Its transition frequency and gain‑bandwidth product support effective operation at higher audio and RF-adjacent frequencies while maintaining manageable thermal requirements during typical use. The device is produced using a well-established semiconductor fabrication process that emphasizes stable electron transport and reduced noise, contributing to consistent amplification and signal clarity across a range of operating conditions. Engineers and hobbyists alike will find the 2N1613 appropriate for prototyping and deployed designs that demand dependable, time‑proven transistor performance.