2SK2643

The 2SK2643 is an N-channel MOSFET engineered for reliable switching and amplification in power management and amplifier circuits. It combines a 200V drain-source rating with a continuous drain current capability up to 4.5A, offering a balance of voltage endurance and current handling suitable for a range of electronic designs. Key electrical characteristics emphasize efficiency and thermal resilience. The device exhibits a low on-resistance of 0.85 Ω which reduces conduction losses and heat generation during operation, and a gate threshold in the range of approximately 2 to 4V that supports precise gate control in typical drive conditions. Rated power dissipation is 30W, allowing stable performance when properly cooled. Drain-Source Voltage: 200V Continuous Drain Current: 4.5A On-Resistance (Rds(on)): 0.85 Ω Gate Threshold Voltage: ~2–4V Power Dissipation: 30W Manufactured using advanced semiconductor processes, the 2SK2643 offers fast switching response and electrical stability across varied operating conditions. These attributes contribute to improved efficiency and reduced thermal stress compared with devices that have higher on-resistance or lower current ratings, making the 2SK2643 a practical choice for designers seeking dependable performance in power supply stages and amplifier circuits.