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2N2907
LD 2.000 LYD
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This 2N2907 is a reliable PNP bipolar junction transistor designed for general-purpose amplification and switching applications. It delivers consistent current handling and voltage ratings suitable for a...
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This 2N2907 is a reliable PNP bipolar junction transistor designed for general-purpose amplification and switching applications. It delivers consistent current handling and voltage ratings suitable for a variety of electronic circuits. Maximum collector current: 600 mA, supporting medium power loads efficiently. Collector-emitter voltage rating: 40 V, for safe operation within common circuit voltages. Gain bandwidth product: around 100 MHz, allowing moderate-speed switching and amplification. Low saturation voltage: minimizes power loss during conduction phases. TO-18 metal can package: durable construction with good thermal conductivity and mechanical protection. Compared to other transistors in its class, the 2N2907 maintains a balanced combination of robust electrical characteristics and affordability. Its specifications often exceed those of earlier PNP models, making it a common choice for hobbyists and professionals seeking dependable switching and linear amplification performance. Performance and design focus on providing consistent gain and reliable switching speeds. Constructed from high-quality silicon, the device exhibits improved thermal stability and predictable behavior across a range of operating conditions. The TO-18 packaging contributes to efficient heat dissipation, which helps sustain device lifespan under typical loads. Typical applications include audio amplification stages, driver circuits, and general signal processing tasks where a stable PNP transistor is required.
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