2N5416

The 2N5416 is a PNP silicon transistor engineered for reliable amplification and switching in a wide range of electronic circuits. Built in a TO-18 metal can package, it combines robust mechanical construction with superior thermal characteristics to support stable operation under varying environmental conditions. Key electrical attributes include a maximum collector-emitter voltage of 100V and a continuous collector current rating of 600mA, making the 2N5416 suitable for moderate-voltage and medium-power tasks. With a gain bandwidth product around 3 MHz and a maximum power dissipation of 625 mW, it delivers effective frequency response and safe thermal limits for many analog and switching applications. Collector-Emitter Voltage: 100V maximum Collector Current: 600mA continuous Gain Bandwidth Product: 3 MHz Power Dissipation: 625 mW maximum Package: TO-18 metal can Compared with plastic-encapsulated alternatives, the TO-18 metal can improves heat transfer and mechanical durability, aiding long-term reliability in both prototype and production environments. The transistor's silicon construction supports consistent signal gain while minimizing noise, which benefits audio, low-frequency analog, and general-purpose switching circuits. Designers and hobbyists will find the 2N5416 useful where a balance of voltage handling, current capacity, and thermal performance is required, and where a metal can package is preferred for improved thermal management and ruggedness.